Carrier concentration in the inversion layer of a MOS field effect transistor
- 31 May 1973
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (5) , 644-646
- https://doi.org/10.1016/0038-1101(73)90167-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Normalization of wave functions in an MIS structureSolid-State Electronics, 1972
- Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistorSolid-State Electronics, 1970
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967