Rapid automatic compensation for charging effects during the SIMS depth profiling of semiconductors
- 1 November 1986
- Vol. 36 (11-12) , 913-916
- https://doi.org/10.1016/0042-207x(86)90139-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An electrostatic iris for use in quadrupole SIMS instrumentsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Improved secondary-ion extraction in a quadrupole-based ion microprobeInternational Journal of Mass Spectrometry and Ion Physics, 1982
- On the mechanism of cluster emission in sputteringPhysics Letters A, 1979
- High-sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMSApplied Physics Letters, 1976