A two-dimensional random growth model in layer-by-layer epitaxy
- 2 April 1984
- journal article
- Published by Elsevier in Surface Science
- Vol. 139 (2-3) , 360-368
- https://doi.org/10.1016/0039-6028(84)90056-6
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Disorder on GaAs(001) surfaces prepared by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Diffraction from surfaces with randomly distributed stepsSurface Science, 1982
- Epitaxy of Si(111) as studied with a new high resolving LEED systemSurface Science, 1982
- Development of steps on GaAs during molecular beam epitaxyJournal of Vacuum Science and Technology, 1982
- Epitaxy of Au on Ag(111) Studied by High-Energy Ion ScatteringPhysical Review Letters, 1981
- LEED-investigations and work-function measurements of the first stages of epitaxy of tungsten on tungsten (110)Journal of Applied Physics, 1980
- Models for an adsorbed layer and their evaluation by comparison of LEED and optical diffraction patterns: The system W(112)O2Surface Science, 1973
- The effect of registry degeneracy on leed beam profilesSurface Science, 1969
- Theoretical electron scattering amplitudes and spin polarizations: Selected targets, electron energies 100 to 1500 eVAtomic Data and Nuclear Data Tables, 1969
- Characterization of chemisorption by LEEDSurface Science, 1967