Internal photopolarization effect in asymmetric superlattices

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Abstract
We propose a steady-state photogalvanic effect in semiconductor superlattices lacking reflection symmetry. The effect arises when the average generation and recombination events are spatially displaced from one another. In the steady state, this requires an internal current of majority carriers and a voltage driving that current. The resultant polarization of the superlattice is a tangible effect, provided the minority-carrier lifetime is sufficiently short, and it can be used to control the gate of a field-effect transistor. The described effect is likely to generate useful applications, especially for fiber-optic communications.