Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
- 3 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (22) , 2540-2542
- https://doi.org/10.1063/1.104820
Abstract
We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High‐resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer ≂20 Å thick epitaxially crystallizes on GaAs after annealing at ≂570 °C in N2. Metal‐oxide‐semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high‐ frequency (100 kHz) capacitance‐voltage curve with a quasi‐static one, interface state densities as low as 4×1012 eV−1/cm−2 were measured on both n‐ and p‐type GaAs.Keywords
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