Preparation and Properties of CuInS2 Thin Films Deposited by RF Sputtering
- 16 July 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 96 (1) , 317-324
- https://doi.org/10.1002/pssa.2210960139
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Growth and properties of CuInNS2 epitaxial layers obtained by chemical vapour transportSolar Energy Materials, 1980
- Painted, Polycrystalline Thin Film Photoelectrodes for Photoelectrochemical Solar CellsJournal of the Electrochemical Society, 1980
- On the preparation of CuInS2 thin films by flash evaporationSolar Energy Materials, 1980
- Spray pyrolysis of CuInSe2 thin filmsSolar Energy Materials, 1980
- Preparation and properties of CuInS2 thin films produced by exposing sputtered Cu-In films to an H2S atmosphereApplied Physics Letters, 1979
- Spray pyrolysis of CuInSe2 and related ternary semiconducting compoundsThin Solid Films, 1979
- Absorption coefficient measurements for vacuum-deposited Cu-ternary thin filmsJournal of Vacuum Science and Technology, 1978
- ChalcopyritesPublished by Springer Nature ,1977
- CuInS2 thin films: Preparation and propertiesJournal of Applied Physics, 1975
- An investigation of the stoichiometry and impurity content of thin silicon oxide films using Rutherford scattering of MeV α-particlesPhysica Status Solidi (a), 1972