SECTION OF PHYSICAL SCIENCES: OPTICAL EFFECTS OF ELECTRIC FIELDS OF DEFECTS IN SOLIDS*
- 1 March 1964
- journal article
- Published by Wiley in Transactions of the New York Academy of Sciences
- Vol. 26 (5 Series I) , 590-598
- https://doi.org/10.1111/j.2164-0947.1964.tb01496.x
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Model for junction luminescenceSolid State Communications, 1963
- Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent JunctionsPhysical Review Letters, 1963
- Effect of Defect Fields on the Optical Absorption EdgePhysical Review B, 1963
- Electric Fields of Defects in SolidsPhysical Review B, 1963
- Tunneling-Assisted Photon Emission in Gallium ArsenideJunctionsPhysical Review Letters, 1962
- Optical Properties of-Type Indium Arsenide in the Fundamental Absorption Edge RegionPhysical Review B, 1961
- Einfluß eines elektrischen Feldes auf eine optische AbsorptionskanteZeitschrift für Naturforschung A, 1958
- Charged dislocations and the strength of ionic crystalsPhilosophical Magazine, 1958
- LXXXVII. Theory of dislocations in germaniumJournal of Computers in Education, 1954
- The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of SolidsPhysical Review B, 1953