Electrical Characteristics of Large-Scale Integration Silicon MOSFET's at Very High Temperatures,Part III: Modeling and Circuit Behavior
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Vol. 7 (1) , 146-153
- https://doi.org/10.1109/tchmt.1984.1136325
Abstract
No abstract availableKeywords
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- On the temperature dependence of subthreshold currents in MOS electron inversion layersSolid-State Electronics, 1979