Simulation of keV particle bombardment of covalent materials: An investigation of the yield dependence on incidence angle
- 1 February 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 46 (1-4) , 1-11
- https://doi.org/10.1016/0168-583x(90)90661-d
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}Physical Review Letters, 1989
- Classical-trajectory calculations onsputtering of a Si(001) surface using anabinitiopotentialPhysical Review B, 1989
- Shadow-cone-enhanced secondary-ion mass-spectrometry studies of Ag{110}Physical Review B, 1989
- New classical potential for accurate simulation of atomic processes in SiPhysical Review B, 1988
- Secondary ion mass spectroscopic studies of the atomic geometry of GaAs(110)Journal of Vacuum Science & Technology B, 1988
- Application of molecular dynamics simulations to the study of ion-bombarded metal surfacesCritical Reviews in Solid State and Materials Sciences, 1988
- Shadow-cone enhanced desorption with angle-resolved secondary ion mass spectrometry detectionJournal of Vacuum Science & Technology A, 1987
- Development of a many-body Tersoff-type potential for siliconPhysical Review B, 1987
- Diffusion without Vacancies or Interstitials: A New Concerted Exchange MechanismPhysical Review Letters, 1986
- THE INFLUENCE OF CHANNELING ON Cu SINGLE-CRYSTAL SPUTTERINGApplied Physics Letters, 1966