LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength
- 1 June 1990
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 25 (6) , 637-652
- https://doi.org/10.1002/crat.2170250606
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Characterization of GalnAsP/InP Double Heterostructure Laser-WafersPhysica Status Solidi (a), 1989
- Steady Plane Orthogonal Electromagneto-Fluiddynamic Incompressible Flows with Isometric GeometryJapanese Journal of Applied Physics, 1988
- Effect of active layer thickness on differential quantum efficiency of 1.3 and 1.55 μm InGaAsP injection lasersApplied Physics Letters, 1987
- Narrow-stripe metal-clad ridge-waveguide laser for 1.3 μm wavelengthApplied Physics Letters, 1986
- High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid-phase-epitaxy techniqueJournal of Applied Physics, 1984
- High purity InP and InGaAsP grown by liquid phase epitaxyJournal of Crystal Growth, 1982
- InGaAsP/InP double-heterostructure lasers: Simple expressions for wave confinement, beamwidth, and threshold current over wide ranges in wavelength (1.1-1.65 µm)IEEE Journal of Quantum Electronics, 1981
- Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniquesJournal of Electronic Materials, 1980
- 1.11-1.67 µmIEEE Journal of Quantum Electronics, 1980
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976