Characterization of GalnAsP/InP Double Heterostructure Laser-Wafers

This publication has 15 references indexed in Scilit:

• Chemical etching and polishing of InP
  Crystal Research and Technology, 1988
• Narrow-stripe metal-clad ridge-waveguide laser for 1.3 μm wavelength
  Applied Physics Letters, 1986
• Characterization of radiative efficiency in double heterostructures of InGaAsP/InP by photoluminescence intensity analysis
  Solid-State Electronics, 1986
• Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
  Japanese Journal of Applied Physics, 1985
• The importance of the excitation volume for the determination of the minority carrier diffusion length
  Physica Status Solidi (a), 1985
• Determination of electron depth-dose function for kilovolt electrons on GaAsP
  Physica Status Solidi (a), 1983
• Improvements to melt preparation in LPE growth of semiconductor heterostructures
  Journal of Crystal Growth, 1982
• Variation of the thickness and composition of lpe InGaAsP, InGaAs, and InP layers grown from a finite melt by the step-cooling technique
  Journal of Electronic Materials, 1981
• Analysis of EBIC considering the generation distribution of minority carriers
  Journal of Physics D: Applied Physics, 1980
• The influence of LPE growth techniques on the alloy composition of InGaAsP
  Applied Physics Letters, 1979