Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer

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Abstract
The photoluminescence intensity of the quaternary layer only in the InP/InGaAsP/InP DH structure is measured as a function of the thickness of the InP buffer layer and the excitation power density. The photoluminescence efficiency drops sharply when the buffer layer thickness is reduced to less than 0.3 µm. A buffer layer more than 0.5 µm thick is required for sufficient photoluminescence efficiency at low excitation. The degradation rate recovers gradually at high excitation in all cases. The radiative recombination efficiency of the quaternary layer is analyzed from the dependence of the photoluminescence intensity on the excitation power. In a DH wafer with no buffer layer, the effective non-radiative recombination life-time is estimated as 2×10-9 s.

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