Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure

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Abstract
Photoluminescence intensity and spectrum of the InGaAsP layer in the double heterostructure with either n-InP/n-InGaAsP or p-InP/n-InGaAsP are investigated over a wide range of excitation power density 10-1–104 Wcm-2 by using a Nd:YAG laser with a wavelength of 1.064 µm transparent to the top InP layer. From analysis of photoluminescence intensity, an interface recombination velocity smaller than 2.5 cm s-1 is estimated. It is found from photoluminescence spectra that carrier temperature becomes higher than lattice temperature at high excitations. The excitation power dependence of photoluminescence intensity of samples with a p-n junction differs from that of samples with an n-n junction. The former shows a low internal quantum efficiency at low excitations and subsequent rapid recovery with increasing excitation power, while the latter shows a linear dependence of photoluminescence intensity over a wide excitation range.