Characterization of radiative efficiency in double heterostructures of InGaAsP/InP by photoluminescence intensity analysis
- 28 February 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (2) , 235-240
- https://doi.org/10.1016/0038-1101(86)90044-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP LayerJapanese Journal of Applied Physics, 1985
- Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double HeterostructureJapanese Journal of Applied Physics, 1984
- Photoluminescence and impurity concentration in GaxIn1−xAsyP1−y alloys lattice-matched to InPJournal of Applied Physics, 1983
- Photoluminescence Intensity in InGaAsP/InP Double-HeterostructuresJapanese Journal of Applied Physics, 1982
- Low threshold 1.55 μm InGaAsP lasers double clad with InGaAsP confining layersElectronics Letters, 1981
- Liquid-phase epitaxial growth of InP and InGaAsP alloysJournal of Crystal Growth, 1981
- High radiance InGaAsP/InP lensed LED́s for optical communication systems at 1.2-1.3 µmIEEE Journal of Quantum Electronics, 1981
- Spatially resolved photoluminescence characterization and optically induced degradation of In1−xGaxAsyP1−y DH laser materialApplied Physics Letters, 1978
- Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InPJournal of the Electrochemical Society, 1974
- Mass spectrometric and thermodynamic studies of vapor-phase growth of In(1−x)GaxPJournal of Physics and Chemistry of Solids, 1973