Photoluminescence and impurity concentration in GaxIn1−xAsyP1−y alloys lattice-matched to InP
- 1 February 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (2) , 1037-1047
- https://doi.org/10.1063/1.332122
Abstract
The photoluminescence spectra of GaInAsP alloys are examined as a function of impurity concentration at several different temperatures and alloy compositions. The photoluminescence linewidth depends on both the impurity concentration and temperature, and our experimental results at 295 °K are described by the empirical relation: ND(ΔE) =9.1×1011 exp(ΔE/4.3 ×10−3) cm−3. It is proposed that photoluminescence linewidth can be used for a simple and rapid determination of the impurity concentration for n‐ and p‐type samples whose total impurity concentration lies in the range 1016 cm−3 <ND +NA 19 cm−3.This publication has 17 references indexed in Scilit:
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