Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells
- 6 December 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (23) , 3164-3166
- https://doi.org/10.1063/1.110211
Abstract
We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.Keywords
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