Thermal stability of the [(Si${)}_{\mathit{m}}$/(Ge${)}_{\mathit{n}}$${]}_{\mathit{p}}$ superlattice interface

The structure of [(Si${)}_{\mathit{m}}$/(Ge${)}_{\mathit{n}}$ ${]}_{\mathit{p}}$ superlattice interfaces and the onset of relaxation and interdiffusion initiated by annealing have been investigated with the use of extended x-ray-absorption fine structure and Raman scattering. For the as-grown material, the Ge-Ge bond length (0.2409 nm) was equal to that calculated for a fully strained Ge layer (0.2412 nm) while the Si-Ge bond length was significantly shorter. The results show conclusively that substantial intermixing along with partial relaxation of the Ge-Ge bonds occurs even for the shortest anneal at 700 °C.