Interdiffusion and strain relaxation in (SimGen)p superlattices
- 8 October 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15) , 1502-1504
- https://doi.org/10.1063/1.103377
Abstract
We report an x‐ray diffraction study of interdiffusion and strain relaxation in (SimGen)p short‐period superlattices. An interdiffusion coefficient Dλ was determined by monitoring, as a function of time, the decay upon annealing of the first order 000 satellite peak arising from the compositional modulation of the superlattice. Strain relaxation was obtained from the shift of the 400 superlattice peak on annealing. In the early stage of annealing the low angle satellite exhibited a rapid nonexponential decay after which a slower exponential decay was observed indicating a larger initial interdiffusion coefficient. This enhancement was correlated with the presence of strain and it disappeared upon relaxation. Diffusion was faster in structures alternating thin Si and thick Ge layers suggesting that migration of Si into Ge is the dominant diffusion process.Keywords
This publication has 17 references indexed in Scilit:
- “Column-By-Column” Compositional Mapping At Semiconductor Interfaces Using Z-Contrast StemMRS Proceedings, 1990
- Growth and characterization of SiGe atomic layer superlatticesThin Solid Films, 1989
- Strain measurements and thermal stability of Si1−xGex/Si strained layersJournal of Materials Research, 1989
- Effect of Strain and Interface Interdiffusion on the Valence Band Offset at Si/Ge InterfacesMRS Proceedings, 1989
- Annealing effects in short period Si-Ge strained layer superlatticesSemiconductor Science and Technology, 1988
- Structural and electronic properties of epitaxial thin-layersuperlatticesPhysical Review B, 1988
- New optical transitions in strained Si-Ge superlatticesPhysical Review B, 1987
- The Diffusion Coefficient of Germanium in SiliconPhysica Status Solidi (a), 1982
- Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion ScatteringPhysical Review Letters, 1981
- The diffusion of silicon in germaniumSolid-State Electronics, 1981