Strain measurements and thermal stability of Si1−xGex/Si strained layers
- 1 February 1989
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 4 (1) , 163-166
- https://doi.org/10.1557/jmr.1989.0163
Abstract
He ion channeling and backscattering experiments have been performed on MBE-grown Si1−xGex/Si strained layers to investigate the tetragonal lattice distortion and the Ge diffusion after thermal annealing. The tetragonal strain of the epitaxial layers has been determined by measuring the angular deviations of inclined 〈110〉 orientations of the adjacent layers. The measured angular shifts indicate a nearly pseudomorphic layer growth of the virgin sample. The angular yield scans of the Ge signal show a pronounced asymmetry, caused by beam steering in the tetragonally distorted lattices of the different layers. Thermal annealing above 800 °C results in strain relaxation and in layer mixing due to the diffusion of germanium. The observed Ge diffusion is strongly enhanced by the elastic strain in the layered structure.Keywords
This publication has 12 references indexed in Scilit:
- Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channelingPhysical Review Letters, 1987
- Growth and properties of Si/SiGe superlatticesSurface Science, 1986
- Strain measurements in EuS/SrS magnetic superlattices by ion channelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Channeling analysis of strain in superlatticesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Thermal relaxation of metastable strained-layer/Si epitaxyPhysical Review B, 1985
- EQUALLY STRAINED Si/SiGe SUPERLATTICES ON Si SUBSTRATESMRS Proceedings, 1985
- Modulation doping in GexSi1−x/Si strained layer heterostructuresApplied Physics Letters, 1984
- Strain relaxation mechanisms of thin deposited filmsCritical Reviews in Solid State and Materials Sciences, 1983
- Lattice Parameter and Density in Germanium-Silicon Alloys1The Journal of Physical Chemistry, 1964