High-Field Electron Emission from Gallium Arsenide
- 1 April 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (4) , 732-733
- https://doi.org/10.1063/1.1729525
Abstract
High‐field electron emission currents were drawn from a point cathode made from a single crystal of n‐type gallium arsenide. Stable currents were observed for several cathodes over a wide range of voltage with an upper limit on the currents which could be drawn from the material.This publication has 8 references indexed in Scilit:
- Theory of Field Emission from SemiconductorsPhysical Review B, 1962
- Field emission from silicon and germanium; field desorption and surface migrationJournal of Physics and Chemistry of Solids, 1961
- Experimental Evidence for the Existence of Two Distinct Field Emission Characteristics from Silicon EmittersJournal of Applied Physics, 1961
- Feldemission aus SiliziumAnnalen der Physik, 1961
- Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germaniumJournal of Physics and Chemistry of Solids, 1959
- Field Desorption by Alternating Fields. An Improved Technique for Field Emission MicroscopyReview of Scientific Instruments, 1958
- Field Emission from SiliconJournal of Applied Physics, 1958
- The Field Emitter: Fabrication, Electron Microscopy, and Electric Field CalculationsJournal of Applied Physics, 1953