High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding
- 17 July 2008
- journal article
- research article
- Published by Optica Publishing Group in Optics Express
- Vol. 16 (15) , 11513-11518
- https://doi.org/10.1364/oe.16.011513
Abstract
We demonstrate germanium photodetectors integrated on submicron silicon waveguides fabricated with a low temperature (≤ 400°C) wafer bonding and ion-cut process. The devices shows a low dark current of ∼100 nA, a fiber accessed responsivity of > 0.4 A/W and an estimated quantum efficiency of above 90%.Keywords
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