Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer Thickness and Growth Temperature

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Abstract
The temperature variation of misfit strain in ZnSe layers grown on GaAs(100) substrates has been measured at 80∼600 K for layer thicknesses of 0.2∼4.0 µm by X-ray diffraction. Layers as thin as 0.2 µm grow coherently on the substrate and the coherency holds even for low temperatures. Strain-free layers at room temperature include the two-dimensional expansive strain with ε ⊥≡(a ⊥-a 0)/a 0≈-0.03% at 80 K; layers including the two-dimensional compressive strain with ε ⊥≈+0.03% at room temperature become strain free at 80 K. The X-ray analysis is consistent with low-temperature reflection spectra.