Growth of High-Quality ZnSe Layers in Hydrogen Plasma

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Abstract
High-quality ZnSe layers have been grown on (100) GaAs substrates at a temperature as low as 320°C in hydrogen plasma using metallic Zn and Se as source materials. ZnSe layers grow coherently on GaAs substrates up to epitaxial-layer thicknesses of about 0.2 µm. The growth rate is about 1.4µm/h. The photoluminescence spectrum at 4.2K is dominated by a neutral-donor bound exciton emission at 2.7966 eV and a free exeiton emission with lower and upper polariton peaks. The near-bandgap emission dominates the spectrum even at room temperature, deep-center emissions being very weak.