Theory of two boron neutral pair defects in silicon
- 15 June 1992
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 4 (24) , 5405-5410
- https://doi.org/10.1088/0953-8984/4/24/010
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Substitutional Impurities in Si: Impurity-Host Bond Lengths and Spring ConstantsEurophysics Letters, 1992
- Electron paramagnetic resonance of a multistable interstitial-carbon-substitutional-phosphorus pair in siliconApplied Physics Letters, 1991
- Bistable interstitial-carbon–substitutional-carbon pair in siliconPhysical Review B, 1990
- EPR identification of the single-acceptor state of interstitial carbon in siliconPhysical Review B, 1990
- Diffuse X-ray scattering from neutron-irradiated silicon doped with boronPhysica Status Solidi (a), 1985
- Negative-Properties for Interstitial Boron in SiliconPhysical Review Letters, 1982
- Interstitial boron in silicon: A negative-systemPhysical Review B, 1980
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boronPhysical Review B, 1975
- Electron irradiation damage in silicon containing high concentrations of boronJournal of Physics C: Solid State Physics, 1972