The α(semiconductor) ag β(metal) transition in tin
- 2 December 1985
- journal article
- Published by Elsevier in Journal of the Less Common Metals
- Vol. 114 (1) , 69-80
- https://doi.org/10.1016/0022-5088(85)90391-1
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The effect of pressure on the semiconductor-to-metal transition temperature in tin and in dilute Sn–Ge alloysJournal of Applied Physics, 1984
- Silicon-stabilized grey tinJournal of Applied Physics, 1983
- Diffraction studies of the high pressure phases of GaAs and GaPJournal of Applied Physics, 1982
- X-ray diffraction from high pressure Ge using synchrotron radiationJournal of Applied Physics, 1982
- The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxyJournal of Crystal Growth, 1981
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973
- Band Structure of Gray TinPhysical Review Letters, 1963
- On the Quality of Gray Tin Crystals and Their Rate of GrowthJournal of Applied Physics, 1958
- Über die Umwandlung von weißem in graues ZinnZeitschrift für anorganische und allgemeine Chemie, 1931
- Ueber eine merkwürdige Structurveränderung bleihaltigen ZinnesJournal für Praktische Chemie, 1851