SIMS and AES characterization of ultrathin nitroxide dielectric layers on silicon prepared by N2O-RTP
- 1 September 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (9) , 1706-1710
- https://doi.org/10.1088/0268-1242/8/9/005
Abstract
No abstract availableKeywords
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