The puzzle of double-doped Si(B, In): Sharp line series in near-band-edge photoluminescence
- 1 November 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 32 (6) , 445-448
- https://doi.org/10.1016/0038-1098(79)91093-7
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- A new acceptor level in indium-doped siliconApplied Physics Letters, 1977
- Optical Study of Silicon Doubly Doped with Boron and Indium AcceptorsCanadian Journal of Physics, 1971
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967