Nitrogen in germanium
- 1 July 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (1) , 1-30
- https://doi.org/10.1063/1.368612
Abstract
No abstract availableThis publication has 113 references indexed in Scilit:
- Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxyApplied Physics Letters, 1998
- Spatial charge fluctuations in amorphous siliconPhysica B+C, 1983
- Studies of thin-film growth of sputtered hydrogenated amorphous siliconSolar Energy Materials, 1982
- Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputteringSolar Energy Materials, 1981
- Urbach rulePhysica Status Solidi (a), 1971
- EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERINGApplied Physics Letters, 1967
- Correlation of the SiH stretching frequency with molecular structureSpectrochimica Acta, 1959
- NITROGEN COMPOUNDS OF GERMANIUM. III. GERMANOUS IMIDEJournal of the American Chemical Society, 1932
- NITROGEN COMPOUNDS OF GERMANIUM. I. THE PREPARATION AND PROPERTIES OF GERMANIC NITRIDEJournal of the American Chemical Society, 1930
- Beiträge zur Chemie des Germaniums, 2. Mitteil.: Germanium‐Stickstoff‐VerbindungenBerichte der deutschen chemischen Gesellschaft (A and B Series), 1930