Direct energy gap of Al1−xInxAs lattice matched to InP
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3) , 341-343
- https://doi.org/10.1063/1.94726
Abstract
The direct energy gap of thin, undoped epitaxial layers of Al1−xInxAs grown on (100) InP has been measured as a function of In content for values of x between 0.46 and 0.55 using catholuminescence spectroscopy. For the composition lattice matched to InP it was measured to be 1.450 eV at room temperature, and 1.508 eV at 4 K. Over the limited range of compositions studied, it varied as Eg =1.450+2.29 Δx eV at room temperature, and as Eg =1.508+2.22 Δx eV at 4 K, where Δx=(0.52−x), the deviation of x from the lattice-matched value.Keywords
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