The formation of microbridges on (100)-oriented silicon

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Abstract
Silicon-based microbridges have been integral parts in a variety of silicon sensors. The authors have studied bridge formation techniques on (100)-oriented silicon wafers using the orientation-dependent etching characteristics of ethylene diamine-pyrocatechol (EDP) and potassium hydroxide (KOH). Specific items investigated were the dependence of the bridge undercutting on bridge orientation and the effects of the masking material-which usually constitutes, either wholly or partially, the bridge structure-on the bridge undercutting characteristics. With respect to masking materials, they found that a masking layer composed of heavily boron-doped silicon drastically reduced bridge undercutting in EDP for certain bridge orientations. This effect was not noticed when KOH was used as the etchant. Based upon these experimental results, they deduced a general guide for the fabrication of silicon-based microbridges on (100)-oriented silicon wafers.

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