65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3–1.55 μm wavelength regime
- 25 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (4) , 612-614
- https://doi.org/10.1063/1.123181
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-speed InGaAs/InAlGaAs/InP waveguide-integratedMSM photodetectors for 1.3 – 1.55 µm wavelength rangeElectronics Letters, 1998
- Buried InAlGaAs-InP waveguides: etching, overgrowth, and characterizationIEEE Photonics Technology Letters, 1998
- Reactive Ion Etching of InP/InAlGaAs/InGaAs HeterostructuresJournal of the Electrochemical Society, 1997
- Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiencyIEEE Photonics Technology Letters, 1997
- Monolithic integration of optical waveguide circuitry with III-V photodetectors for advanced lightwave receiversJournal of Lightwave Technology, 1993
- InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communicationsIEEE Journal of Quantum Electronics, 1991