Fabrication of SiGe/Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy
- 30 June 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6) , 539-541
- https://doi.org/10.1016/0038-1101(94)90241-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Fabrication of GaAs arrowhead-shaped quantum wires by metalorganic chemical vapor deposition selective growthApplied Physics Letters, 1993
- Photoluminescence spectra and anisotropic energy shift of GaAs quantum wires in high magnetic fieldsPhysical Review Letters, 1992
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si1-xGex/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1992
- Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substratesApplied Physics Letters, 1992
- Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved substratesApplied Physics Letters, 1992
- Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substratesApplied Physics Letters, 1992
- Vertically stacked multiple-quantum-wire semiconductor diode lasersApplied Physics Letters, 1991
- Lateral quantum well wires fabricated by selective metalorganic chemical vapor depositionApplied Physics Letters, 1990
- Application of selective epitaxy to fabrication of nanometer scale wire and dot structuresApplied Physics Letters, 1990