Enhanced Residual Disorder in Silicon from Recoil Implantation of Oxygen and Nitrogen by Arsenic Implants Through Dielectric Layers
- 1 January 1975
- book chapter
- Published by Springer Nature
Abstract
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This publication has 2 references indexed in Scilit:
- Defects in arsenic-implanted p-n junctionsApplied Physics Letters, 1973
- Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantationsApplied Physics Letters, 1973