Type conversion of epitaxial GaAs layers after heavy ion MeV implantation and annealing
- 1 July 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 59-60, 1103-1105
- https://doi.org/10.1016/0168-583x(91)95774-8
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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