Temperature dependence of light-current characteristics of 0.98-/spl mu/m Al-free strained-quantum-well lasers
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (11) , 1303-1305
- https://doi.org/10.1109/68.334820
Abstract
The decrease of the differential efficiency of 0.98-/spl mu/m semiconductor lasers with temperature can make high power, high temperature applications difficult. We present an experimental and theoretical study of the temperature dependence of the internal quantum efficiency, internal loss and differential gain of 0.98-/spl mu/m InGaAs/InGaAsP/InGaP strained quantum well lasers. In contrast to some earlier results, our measurements show the dominance of internal loss, attributed to free carrier absorption, in determining the temperature dependence of the differential efficiency, and show that leakage current is negligible below 120/spl deg/C.Keywords
This publication has 12 references indexed in Scilit:
- Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasersApplied Physics Letters, 1993
- Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasersIEEE Journal of Quantum Electronics, 1993
- Drift leakage current in AlGaInP quantum-well lasersIEEE Journal of Quantum Electronics, 1993
- Low threshold 0.98 μm aluminium-free strained-quantum-well InGaAs/InGaAsP/InGaP lasersElectronics Letters, 1993
- OPTICAL GAIN IN III–V BULK AND QUANTUM WELL SEMICONDUCTORSPublished by Elsevier ,1993
- SINGLE QUANTUM WELL InGaAsP AND AlGaAs LASERS: A STUDY OF SOME PECULIARITIESPublished by Elsevier ,1993
- Analysis of the high temperature characteristics of InGaAs-AlGaAs strained quantum-well lasersIEEE Journal of Quantum Electronics, 1992
- Predicting diode laser performancePublished by SPIE-Intl Soc Optical Eng ,1991
- The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasersIEEE Journal of Quantum Electronics, 1983
- The temperature dependence of threshold current for double-heterojunction lasersJournal of Applied Physics, 1979