Etching of Germanium Crystals by Ion Bombardment

Publisher Website
Google Scholar
Abstract
A study is made of the etch effects produced by sputteringgermanium crystals and bicrystals under normal incident low‐energy (100 ev) Hg+‐ion bombardment in a low pressureplasma (1 micron gas pressure). The surfaces show preferentially etched pits which readily reveal the crystal orientation. These pits become more abundant at lower target temperature and truncated at higher target temperature or at higher energy of the bombarding ions. A sequence of micrographs from the same surface area reveals that these pits cannot be correlated with the pits which are persistently developed by CP‐4. A 6° tilt boundary however always develops into a sharply indented furrow just as was the case with a CP‐4 etchant.

This publication has 12 references indexed in Scilit: