Density of electronic states in a biased resonant tunneling structure
- 15 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (3) , 277-279
- https://doi.org/10.1063/1.102807
Abstract
We calculate the change in the density of states due to a biased resonant tunneling structure. The maximum of the density of states near resonance gets shifted towards the low-energy side compared to the unbiased case, as does the transmission coefficient, although the two need not be identical. For the case of asymmetric barrier heights, the left-right symmetry of the density of states is broken when the field is nonvanishing.Keywords
This publication has 9 references indexed in Scilit:
- Density of states in a resonant-tunneling structurePhysical Review B, 1989
- Local density of states in double-barrier resonant-tunneling structures. II. Finite-width barriersPhysical Review B, 1989
- Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunnelingApplied Physics Letters, 1988
- Theoretical study of tunneling phenomena in double-barrier quantum-well heterostructuresPhysical Review B, 1988
- Local density of states in double-barrier resonant-tunneling structuresPhysical Review B, 1988
- Transmission and reflection times for scattering of wave packets off tunneling barriersPhysical Review B, 1987
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974