Computer simulation of the development of dish-shaped deepenings by orientation-dependent etching of {100} silicon
- 4 December 1993
- journal article
- other
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 39 (3) , 261-262
- https://doi.org/10.1016/0924-4247(93)80228-9
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Chemically etched micromirrors in siliconApplied Physics Letters, 1988
- Use of Modified Free Energy Theorems to Predict Equilibrium Growing and Etching ShapesJournal of Applied Physics, 1962