The dislocation structure of GaP crystals after 6–10° bending
- 1 October 1987
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 56 (4) , 533-551
- https://doi.org/10.1080/01418618708214404
Abstract
More than one thousand individual dislocations have been examined by TEM in S-doped LEC-GaP after three-point bending of (001) wafers at temperatures in the range 605-615°C. A linear variation of dislocation density with bending angle between 6° and 10° is observed. The role of different dislocation types is investigated. An increasing proportion of 60° dislocations in {111} planes develops during bending. Macroscopic curvature is discussed in terms of the dislocation density observed. Resolved shear stresses are derived from slip-band observation.Keywords
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