Microdefects and striations in dislocation-free LEC-GaP crystals
- 30 November 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 41 (1) , 13-28
- https://doi.org/10.1016/0022-0248(77)90089-6
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopyJournal of Crystal Growth, 1975
- Nonstoichiometry and nonradiative recombination in GaPJournal of Electronic Materials, 1975
- Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975
- Determination of the Solidus and Gallium and Phosphorus Vacancy Concentrations in GaPJournal of the Electrochemical Society, 1974
- Etch Pit Studies of GaP Liquid Phase Epitaxial LayersJournal of the Electrochemical Society, 1973
- Defect Studies of GaP Crystals Pulled from Nonstoichiometric Melts: Dislocation and ``Saucer'' Etch PitsJournal of Applied Physics, 1972
- Correlation of Defect-Impurity Interactions in GaP with Local Variations in PhotoluminescenceApplied Physics Letters, 1971
- Etching Studies of Impurity Precipitates in Pulled GaP CrystalsJournal of the Electrochemical Society, 1971
- Pulling of gallium phosphide crystals by liquid encapsulationJournal of Crystal Growth, 1968
- Liquid encapsulation crystal pulling at high pressuresJournal of Crystal Growth, 1968