Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopy
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 244-249
- https://doi.org/10.1016/0022-0248(75)90137-2
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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