Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering studies
- 31 May 1995
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 94 (8) , 613-617
- https://doi.org/10.1016/0038-1098(95)00132-8
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Photoluminescence intensity and multiple phonon Raman scattering in quantum dots: evidence of the bottleneck effectSurface Science, 1994
- Equilibrium multiatomic step structure of GaAs(001) vicinal surfaces grown by metalorganic chemical vapor depositionApplied Physics Letters, 1993
- Observation of quantum wire formation at intersecting quantum wellsApplied Physics Letters, 1992
- Semiconductor quantum-wire structures directly grown on high-index surfacesPhysical Review B, 1992
- Direct synthesis of corrugated superlattices on non-(100)-oriented surfacesPhysical Review Letters, 1991
- Optical transitions in quantum wires with strain-induced lateral confinementPhysical Review Letters, 1990
- Decay times of one-dimensional excitons in GaAs/As quantum-well wiresPhysical Review B, 1990
- Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxyApplied Physics Letters, 1990
- Lateral interface mixing in GaAs quantum well wire arraysApplied Physics Letters, 1989
- Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum ConfinementPhysical Review Letters, 1989