High-fluence implantations of Ge into 〈111〉 Si
- 31 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1-3) , 70-74
- https://doi.org/10.1016/0029-554x(81)90985-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Regrowth Behaviour of Ge Implanted SiPhysica Status Solidi (a), 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Study of the annealing behaviour of high dose implants in silicon and germanium crystalsRadiation Effects, 1975
- Diffusion of Ge in SiGe alloysPhysical Review B, 1974
- Effect of Alloying and Pressure on the Band Structure of Germanium and SiliconPhysical Review B, 1963
- Optical investigation of the band structure of Ge-Si alloysJournal of Physics and Chemistry of Solids, 1961