In situ monitoring during ion beam processing of multi-layer epitaxial III-V device structures
- 1 July 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (7) , 463-465
- https://doi.org/10.1088/0268-1242/2/7/013
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Planar VPE infill 1.3 μm integrated laser/monitor photodiode with CARIBE etched facetsElectronics Letters, 1986
- Secondary Ion Analysis of Silicon under Ar+ Ion Etching in Chlorine and Fluorine FluxJapanese Journal of Applied Physics, 1983
- Monitoring secondary ions during ion etchingJournal of Vacuum Science and Technology, 1979