Mosaic structure in epitaxial thin films having large lattice mismatch
- 1 November 1997
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (9) , 4286-4295
- https://doi.org/10.1063/1.366235
Abstract
Epitaxial films having a large lattice mismatch with their substrate invariably form a mosaic structure of slightly misoriented sub-grains. The mosaic structure is usually characterized by its x-ray rocking curve on a surface normal reflection but this is limited to the out-of-plane component unless off-axis or transmission experiments are performed. A method is presented by which the in-plane component of the mosaic misorientation can be determined from the rocking curves of substrate normal and off-axis reflections. Results are presented for two crystallographically distinct heteroepitaxial systems, ZnO, AlN, and GaN (wurtzite crystal structure) on -plane sapphire and MgO (rock salt crystal structure) on (001) GaAs. The differences in the mosaic structure of these films are attributed to the crystallographic nature of their lattice dislocations.
This publication has 14 references indexed in Scilit:
- Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3Journal of Applied Physics, 1996
- Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniquesApplied Physics Letters, 1996
- Growth defects in GaN films on sapphire: The probable origin of threading dislocationsJournal of Materials Research, 1996
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN filmsApplied Physics Letters, 1996
- Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphireApplied Physics Letters, 1995
- Epitaxial Aluminum‐Doped Zinc Oxide Thin Films on Sapphire: I, Effect of Substrate OrientationJournal of the American Ceramic Society, 1995
- Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrateJournal of Applied Physics, 1995
- Description and peak-position determination of a single X-ray diffraction profile for high-accuracy lattice-parameter measurements by the Bond method. I. An analysis of descriptions availableActa Crystallographica Section A Foundations of Crystallography, 1993
- Orientation relationships of zinc oxide on sapphire in heteroepitaxial chemical vapor depositionJournal of Crystal Growth, 1981
- Dislocations, Slip, and Fracture in BeO Single CrystalsJournal of Applied Physics, 1967