Barrier behaviour of plasma deposited silicon oxide and nitride against Cu diffusion
- 1 October 1995
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 91 (1-4) , 303-307
- https://doi.org/10.1016/0169-4332(95)00135-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Copper-Based Metallization in ULSI Structures: Part II: Is Cu Ahead of Its Time as an On-Chip Interconnect Material?MRS Bulletin, 1994
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Diffusion of Metals in Silicon DioxideJournal of the Electrochemical Society, 1986