Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon
- 1 January 1987
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 22 (7) , 631-636
- https://doi.org/10.1051/rphysap:01987002207063100
Abstract
A quantitative account of the recombination properties of grain boundaries in undoped and impurity doped polycrystalline silicon is given, by analysing the results of EBIC measurements. These latter were carried out after having developed a new sampling methodology, which allows the intercomparison of EBIC results on a relative scale. The problem of synergistic carriers collection effects due to impurities and extended defects is also consideredKeywords
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