Experimental determination of minority-carrier lifetime and recombination mechanisms in p-type Hg1−xCdxTe
- 1 August 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8) , 5182-5194
- https://doi.org/10.1063/1.329421
Abstract
This paper presents an experimental study of minority‐carrier lifetime and recombination mechanisms in n+‐on‐pHg1−xCdxTe photodiodes. Diode pulse recovery lifetime measurements have been carried out as a function of temperature, net acceptor concentration, and excess carriers in the alloy composition range 0.2<x1−xCdxTe photodiode performance.This publication has 22 references indexed in Scilit:
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