Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
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- 3 April 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (14) , 1926-1928
- https://doi.org/10.1063/1.126214
Abstract
Dielectric properties of ultrathin hafnium oxide reoxidized with rapid thermal annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 Å hafnium oxide was scaled down to ∼10 Å with a leakage current less than 3×10 −2 A/cm 2 at −1.5 V (i.e., ∼2 V below V FB ). Leakage current increase due to crystallization was not observed even after 900 °C rapid thermal annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer growth and possible silicate formation in the HfO 2 film.Keywords
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