Electrical characterization of SiSi0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- 28 February 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 35 (1-4) , 33-36
- https://doi.org/10.1016/s0167-9317(96)00131-1
Abstract
No abstract availableKeywords
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